Nonlinear features of the superconductor–ferromagnet–superconductor φ₀ Josephson junction in the ferromagnetic resonance region

• Aliasghar Janalizadeh,
• Ilhom R. Rahmonov,
• Sara A. Abdelmoneim,
• Yury M. Shukrinov and
• Mohammad R. Kolahchi

Beilstein J. Nanotechnol. 2022, 13, 1155–1166, doi:10.3762/bjnano.13.97

• simulations. The role of the DC superconducting current and the state with negative differential resistance (NDR) in the I–V characteristics were not clarified. Also, the effects of the Josephson-to-magnetic energy ratio and the spin–orbit coupling (SOC) were not investigated at that time. In the present

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• devices have linear I–V curves over a wide range of the bias voltage. However, the current decreases as the voltage increases further. This indicates a negative differential resistance (NDR) behavior in these devices, which comes from the interaction between the discrete states in the channel region and

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• heterojunction; armchair boron nitride nanoribbon (ABNNR); armchair graphene nanoribbon (AGNR); negative differential resistance (NDR); nonequilibrium Green’s function (NEGF); resonant tunneling diode (RTD); substitutional defects; Introduction 2D materials have gained tremendous research interest due to the

• as platforms for fully two-dimensional nanoelectronic devices [7][8][9][10][11]. Resonant tunneling diodes (RTDs) are among various electronic devices realized on the platform of 2D Gr/hBN heterostructures [12][13][14][15][16]. RTDs exhibit negative differential resistance (NDR) and have a wide range

Invariance of molecular charge transport upon changes of extended molecule size and several related issues

• Ioan Bâldea

Beilstein J. Nanotechnol. 2016, 7, 418–431, doi:10.3762/bjnano.7.37

• computed approximately within ubiquitous wide- and flat-band limits (WBL and FBL, respectively). To exemplify the limitations of the latter, the phenomenon of negative differential resistance (NDR) is considered. It is shown that the exactly computed current may exhibit a substantial NDR, while the NDR

• numerical code to compute transport properties (which should not change whatever the size of the central region chosen). To see that the results presented above are also relevant for more pragmatic purposes, the effect of negative differential resistance (NDR) is discussed next in conjunction with common

• Δε = 2t − V/2 − (−2t + V/2) = 4t − V decreases with increasing V is reflected in a negative differential resistance (NDR) effect, which characterizes this regime. The physics underlying Equation 29 is correctly accounted for within the flat-band approximation (see the last line of Equation 27). This

Negative differential electrical resistance of a rotational organic nanomotor

• Hatef Sadeghi,
• Sara Sangtarash,
• Qusiy Al-Galiby,
• Rachel Sparks,
• Steven Bailey and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 2332–2337, doi:10.3762/bjnano.6.240

• aim is to demonstrate that this coupling between a controlled geometry and electrical properties can lead to desirable nonlinear current–voltage relations and negative differential resistance (NDR). As a specific example that demonstrates the general principle, we analyse the molecular-scale NEM shown

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• low, intrinsic dark current and noise. Keywords: heterojunction; multiwall carbon nanotubes; NDR; photodetector; tunneling; Introduction Negative differential resistance (NDR), where the current decreases as a function of voltage, has been observed in the current–voltage curves of several types of